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FDZ2551N
November 1999 ADVANCE INFORMATION
FDZ2551N
Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
General Description
Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2551N minimizes both PCB space and RDS(ON). This dual BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
Features
*= 9 A, 20 V. RDS(ON) = 0.018 =@ VGS = 4.5 V RDS(ON) = 0.030 @ VGS = 2.5 V. *= Occupies only 0.10 cm2 of PCB area. 1/3 the area of SO-8. *= Ultra-thin package: less than 0.70 mm height when mounted to PCB. *= Outstanding thermal transfer characteristics: significantly better than SO-8. *= Ultra-low Qg x RDS(ON) figure-of-merit. *= High power and current handling capability.
Applications
*= Battery management *= Load switch *= Battery protection
D
D S S S
D S
Pin 1
S G
S
G S G
Q2
S S
Q1
D
F2551
Q1
S
D
S
D
Q2
G
Pin 1
D
Bottom
Top
TA=25oC unless otherwise noted
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range
Ratings
20 12 9 20 3 -55 to +175
Units
V V A W C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 8
C/W C/W
Package Marking and Ordering Information
Device Marking F2551 Device FDZ2551N Reel Size TBD Tape width TBD Quantity TBD
1999 Fairchild Semiconductor Corporation
FDZ2551N Rev A1(W)
FDZ2551N
Electrical Characteristics
Symbol
BVDSS BVDSS ===TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A,Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = -12 V VGS = 0 V VDS = 0 V VDS = 0 V
Min
20
Typ
Max Units
V mV/C 1 100 -100 A nA nA
Off Characteristics
14
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 A VGS = 4.5 V, ID = 9 A VGS = 2.5 V, ID = 7 A
0.4
0.9
1.5 0.018 0.030
V
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.5 A Voltage
(Note 2)
0.77
2.5 1.2
A V
Notes: 1. RJA is a function of the junction-to-case (RJC), case-to-ambient (RCA ) and the PC Board (RBA ) thermal resistance. For the purpose of determining RJC the case thermal reference is defined as the top surface of the package. RJC is guaranteed by design while RCA and RBA are determined by the user's design. Maximum current ratings assume single device operation. (a). RJA = 50C/W (steady-state) when mounted on 1 in2 of 2 oz. copper. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDZ2551N Rev A(W)
Dimensional Outline and Pad Layout
2.50 C L INDEX SLOT
FDZ2551N
o
0.30
1 A 2 3
GATE 1
B
D
D S1
D S1
3.25
F2551
Date Code
0.76
4.00
C
S1
S1 S2
S1
0.65
C L
D
S2 S2 D
S1 = Source 1 S2 = Source 2 D = Drain
GATE 2
E
S2 D
S2 D
F
0.65 TOP VIEW 1.30 RECOMMENDED LAND PATTERN SOLDER BALL, o 0.25
0.25
C L
SOLDER BALL, o 0.25 FRONT VIEW
F
E
3.25
D
INDEX SLOT (HIDDEN) 0.51
C L
C
0.65
B
A
1
2
3
SEATING PLANE SIDE VIEW
0.65 1.30 BOTTOM VIEW
NOTES: UNLESS OTHEWISE SPECIFIED A) ALL DIMENSIONS ARE IN MILLIMETERS.
FDZ2551N Rev A(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
www.fairchildsemi.com

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